SSM1K2N20 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSM1K2 20

1A, 200V, RDS(O ) 1.2Ω

Ω

-Channel Enhancement Mode Power MOSFET

22-Dec-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

BVDSS

200

VGS=0, ID=250uA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

Forward Transfer conductance

gfs

2.8

VDS=10V, ID=1A

Gate-Source Leakage Current

IGSS

±100

VGS=±20V

Drain-Source Leakage Current

IDSS

VDS=160V, VGS=0

1.2

VGS=10V, ID=1A

Static Drain-Source On-Resistance

RDS(ON)

1.7

VGS=4.5V, ID=0.5A

Total Gate Charge

8.5

Gate-Source Charge

Qgs

1.1

Gate-Drain (“Miller”) Charge

Qgd

2.1

ID=1A

VDS=160V

VGS=10V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

6.5

VDD=100V

ID=1A

VGS=10V

RG=3.3

Input Capacitance

Ciss

225

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS=0

VDS=25V

f=1MHz

Source-Drain Diode

Continuous Source Current

Pulsed Source Current

ISM

Forward On Voltage

VSD

1.2

IS=1A, VGS=0V

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

280

IF=1A , dI/dt=100A/µs ,

TJ=25°C

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

The power dissipation is limited by 150°C junction temperature.

Pulse test : Pulse width ≦ 300us, Duty cycle ≦ 2%.

SSM1K2N20 Datenblatt(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSM1K2N20 Datenblatt(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

Datenblatt Download

Link URL