EC736014D

60V 、

、

、

、60A N-Channel

Page 1 of 7

5A21N-Rev.F001

60V

12m

(typ.)

60A

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive

avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power

switching application and a wide variety of other applications.

Features and Benefits:

Advanced MOSFET process technology

Special designed for PWM, load switching and

general purpose applications

Ultra low on-resistance with low gate charge

Fast switching and reverse body recovery

175℃ operating temperature

Main Product Characteristics

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

60

42

Pulsed Drain Current

240

A

Power Dissipation

115

W

Linear Derating Factor

0.74

W/°C

Drain-Source Voltage

60

V

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy @ L=0.3mH

235

mJ

Avalanche Current @ L=0.3mH

39

A

Operating Junction and Storage Temperature Range

-55 to + 175

°C