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TH8055 Datenblatt(PDF) 6 Page - Micro Electronics

Teilenummer TH8055
Bauteilbeschribung  Single Wire CAN Transceiver
PDF  15 Pages
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Hersteller  MICRO-ELECTRONICS [Micro Electronics]
Direct Link  http://www.microelectr.com.hk
Logo MICRO-ELECTRONICS - Micro Electronics

TH8055 Datenblatt(HTML) 6 Page - Micro Electronics

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TH8055
Single Wire CAN Transceiver
390108055
Page 6 of 15
Rev. 1.1a
Jan 2002
Electrical Specification
All voltages are referenced to ground (GND).
Positive currents flow into the IC. The absolute
maximum ratings
given in the table below are
limiting values that do not lead to a permanent
damage of the device but exceeding any of these
limits may do so. Long term exposure to limiting
values may affect the reliability of the device.
Reliable operation of the TH8055 is only specified
within the limits shown in ”Operating conditions”.
Operating Conditions
Parameter
Symbol
Min
Max
Unit
Battery voltage
VBAT
5.0
18
V
Operating ambient temperature
TA
-40
125
°C
Junction temperature
TJ
-40
150
°C
Absolute Maximum Ratings
Parameter
Symbol
Condition
Min
Max
Unit
Supply voltage
VBAT
-0.3
18
V
Load dump; t<500ms
40
Short-term supply voltage
VBAT.LD
Jump start; t<1 min
27
V
Transient supply voltage
VBAT.TR1
ISO 7637/1 pulse 1
[1]
-50
V
Transient supply voltage
VBAT.TR2
ISO 7637/1 pulses
2
[1]
100
V
Transient supply voltage
VBAT.TR3
ISO 7637/1 pulses 3A, 3B
-200
200
V
CANH voltage
VCANH
VBAT=0
-20
40
V
Transient bus voltage
VCANHTR1 ISO 7637/1 pulse 1 [2]
-50
V
Transient bus voltage
VCANHTR2 ISO 7637/1 pulses 2 [2]
100
V
Transient bus voltage
VCANHTR3 ISO 7637/1 pulses 3A, 3B [2]
-200
200
V
DC voltage on pin LOAD
VLOAD
via RT > 2k
-40
40
V
DC voltage on pins TxD,MODE1,MODE0,RxD
VDC
-0.3
7
V
ESD capability of CANH
VESDBUS
Human body model
Equivalent to discharge 100pF
with 1.5k
-4000
4000
V
ESD capability of any other pins
VESD
Human body model
Equivalent to discharge 100pF
with 1.5k
-2000
2000
V
Maximum latch-up free current at any Pin
ILATCH
-500
500
mA
Maximum power dissipation
Ptot
At TA = 125 °C
197 [3]
mW
Thermal impedance
JA
in free air
152
K/W
Storage temperature
TSTG
-55
150
°C
Junction temperature
TJ
-40
150
°C
[1] ISO 7637 test pulses are applied to VBAT via a reverse polarity diode and >1uF blocking capacitor .
[2] ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1 nF.
[3] The application board shall be realized with a ground copper foil area > 25mm2 .



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