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NCE3402 Datenblatt(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Teilenummer NCE3402
Bauteilbeschribung  N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Hersteller  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE3402 Datenblatt(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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Wuxi NCE Power Semiconductor Co., Ltd
Page
v1.0
2
NCE3402
Pb Free Product
http://www.ncepower.com
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
1.5
3.0
V
VGS=10V, ID=3A
-
50
65
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=3 A
-
65
75
mΩ
Forward Transconductance
gFS
VDS=5V,ID=3A
14
-
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
235
-
PF
Output Capacitance
Coss
-
35
-
PF
Reverse Transfer Capacitance
Crss
VDS=10V,VGS=0V,
F=1.0MHz
-
18
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
3.5
-
nS
Turn-on Rise Time
tr
-
1.5
-
nS
Turn-Off Delay Time
td(off)
-
17.5
-
nS
Turn-Off Fall Time
tf
VDD=15V,ID=1A
VGS=10V,RGEN=6Ω
-
2.5
-
nS
Total Gate Charge
Qg
-
10
-
nC
Gate-Source Charge
Qgs
-
0.95
-
nC
Gate-Drain Charge
Qgd
VDS=15V,ID=3A,VGS=10V
-
1.6
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=3A
-
-
1.2
V
Diode Forward Current
(Note 2)
IS
-
-
3
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .
%
4.
Guaranteed by design, not subject to production



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