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FH1100 Datenblatt(PDF) 1 Page - Advanced Semiconductor |
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FH1100 Datenblatt(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VF IF = 10 mA 550 mV IR VR = 1.0 V 1.0 µA VBR IR = 100 µA 5.0 V CT0 VR = 0 V f = 1.0 MHz 1.0 pF NF f = 890 MHz 10 dB QS IF = 10 mA 1.6 pC SILICON DIODE FH1100 DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. FEATURES INCLUDE: • Q S = 1.6 pC Typ. • C = 1.0 pF Max. @ f = 890 MHz • Hermetic Glass Package MAXIMUM RATINGS IF 10 mA VR 5.0 V PDISS 100 mW @ TC = 25 °C TJ -65 °C to +125 °C TSTG -65 °C to +150 °C Tsoldering +260 °C for 5 Seconds PACKAGE STYLE DO-7 |
Ähnliche Teilenummer - FH1100 |
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Ähnliche Beschreibung - FH1100 |
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