| Datenblatt-Suchmaschine für elektronische Bauteile |
|
SDP65N03L Datenblatt(PDF) 1 Page - SamHop Microelectronics Corp. |
|
|
|||||||||||||||||||||||||||||
SDP65N03L Datenblatt(HTML) 1 Page - SamHop Microelectronics Corp. |
|
1 / 5 page ![]() N-Channel Logic Level E nhancement Mode Field E ffect Transistor ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted) THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Case Thermal R esistance, Junction-to-Ambient R JC R JA 2 62.5 /W C /W C 30 Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V -Pulsed ID 65 A IDM 195 A Drain-S ource Diode Forward Current IS 65 A Maximum Power Dissipation PD W Operating and S torage Temperature R ange TJ, TS TG -65 to 175 C @ Tc=25 C Derate above 25 C 75 0.5 W/ C Drain Current-Continuous @ TJ=125 C a S G D S DB S E R IE S TO-263(DD-PAK) G S D S DP S E R IE S TO-220 S D G 4 1 P R ODUC T S UMMAR Y V DS S ID 30V 65A 8 @ V GS = 10V 12 @ V GS = 4.5V S DP /B 65N03L F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. S amHop Microelectronics C orp. 20 R DS (on) ( m W ) TYP S eptember , 2002 |
Ähnliche Teilenummer - SDP65N03L |
|
Ähnliche Beschreibung - SDP65N03L |
|
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |