1803DFH datasheet(2/6 Pages) STMICROELECTRONICS

Teilenummer	1803DFH

Bauteilbeschribung	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

3.125

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1500 V

Tj = 125

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 4 V

130

400

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 700 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 4 A

IB = 0.8 A

IC = 4 A

IB = 1.2 A

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 4 A

IB = 0.8 A

1.2

hFE

∗

DC Current Gain

IC = 1 A

VCE = 5 V

IC = 4.5 A

VCE = 1 V

IC = 4.5 A

VCE = 5 V

Diode Forward Voltage

IF = 5 A

1.5

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 4 A

IBon(END) = 0.8 A

LB = 5

µH

VBB = -2.5 V

f = 16 KHz

(see figure 1)

2.7

0.3

0.6

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

ST1803DFH

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