ESJC50F12 datasheet(1/2 Pages) GETEDZ

Teilenummer	ESJC50F12

Bauteilbeschribung	High voltage silicon rectifier diodes

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Hersteller	GETEDZ [GETAI ELECTRONICS DEVICE CO., LTD]

Direct Link	http://www.hvgtsemi.com

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ESJC50F12

450mA 12kV 100nS--High voltage silicon rectifier diodes

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2017 1 / 2

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

VRRM

Ta=25°C

12

kV

Average Output Current

IF

Ta=55°C; Resistive Load

450

mA

Suege Current

IFSM

Ta=25°C; 1/2 Sine(60Hz); 8.3mS

30

A

Junction Temperature

TJ

-40~+150

°C

Allowable Operation Case Temperature

Tc

125

°C

Storage Temperature

TSTG

-40~+150

°C

ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)

Items

Symbols

Condition

Data value Units

Maximum Forward Voltage Drop

VF

at 25°C;IF =IF(AV)

18

V

Maximum Reverse Current

IR1

at 25°C;VR =VRRM

5.0

uA

IR2

at 100°C;VR =VRRM

50

uA

Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

100

nS

Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

4.3

pF

HVGT high voltage silicon rectifier diodes is

made of high quality glass passivated chip and high

reliability epoxy resin sealing structure, and through

professional testing equipment inspection qualified

after to customers.

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-721

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency .

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 2.1 grams (approx).

Ähnliche Beschreibung - ESJC50F12

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