S1AF THRU S1MF

Ratings at 25

ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

°C

Maximum DC Blocking Voltage

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

(JEDEC Method)

Maximum Instantaneous Forward Voltage at 1 A

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Operating and Storage Temperature Range

Maximum Average Forward Rectified Current

at Ta = 65

°C

Maximum DC Reverse Current

Ta = 25

°C

at Rated DC Blocking Voltage

Ta =125

°C

1）

Typical Junction Capacitance

2）

50

100

200

400

600

800

1000

V

35

70

140

280

420

560

700

V

50

100

200

400

600

800

1000

V

1

30

1.1

5

50

4

180

-55 ~ +150

A

A

V

μA

pF

°C

Maximum Ratings and Electrical characteristics

S1AF

S1BF

S1DF

S1GF

S1JF

S1KF

S1MF

Typical Thermal Resistance

Measured at 1 MHz and applied reverse voltage of 4 V D.C

2

1

）

°C/W

T , T

j

stg

Symbols

Units

FEATURES

For surface mounted applications

Low profile package

Glass Passivated Chip Juntion

Easy to pick and place

Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICAL DATA

Case: SMAF

Terminals: Solderable per MIL-STD-750, Method 2026

pprox. Weight: 27mg 0.00086oz

•

•

•

•

•

•

•

• A

星合电子

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

S u r f a c e M o u n t G e n e r a l P u r p o s e S i l i c o n R e c t i f i e r s

R e v e r s e Vo l t a g e - 5 0 t o 1 0 0 0 V

F o r w a r d C u r r e n t - 1

A

1

ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ　ＣＯ．，ＬＴＤ．　　　　　　　　　　　　　　　　　　　　　　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ

0.179(4.40)

0.199(5.05)

0.150(3.80)

0.035(0.90)

Dimensions in inches and (millimeters)

SMAF

Cathode Band

Top View

0.128(3.25)

0.110(2.80)

0.094(2.40)

0.051(1.30)

0.059(1.50)

0.055(1.40)

0.012(0.30)

0.006(0.15)

0.047(1.20)

0.028(0.70)

XH