| Datenblatt-Suchmaschine für elektronische Bauteile |
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SC8232 Datenblatt(PDF) 1 Page - SamHop Microelectronics Corp. |
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SC8232 Datenblatt(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 5 page ![]() S mHop Microelectronics C orp. a PRODUCT SUMMARY VSSS IS RSS(ON) (m Ω) Max 20V 8A 18.0 @ VGS=2.5V 11.0 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 4.0 www.samhop.com.tw Sep,11,2015 1 Details are subject to change without notice. SC8232 Green Product ESD Protected. 12.0 @ VGS=4.0V 15.0 @ VGS=3.1V S1 1.85 0.03 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 0.65 0.65 6 - φ 0.31 TOP VIEW BOTTOM VIEW Mark area Unit : mm 0.210 0.010 0.107 0.007 FET1 FET2 Gate 2 Gate 1 Body Diode Protect Diode Source 2 Source 1 Gate Symbol VSSS VGSS ISP A PT °C -55 to 150 IS Units Parameter 20 8 80 V V ±12 Gate-Source Voltage Source-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA=25°C) Limit Source Current-Continuous -Pulsed a A Total Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG W 1.3 a b 0.65 S1 S2 S2 G1 G2 13.0 @ VGS=3.8V WLCSP 8232 Date Code 1-pin index mark S1 |
Ähnliche Teilenummer - SC8232 |
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Ähnliche Beschreibung - SC8232 |
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