www.roithner-laser.com

1

S810500MG

Description

S810500MG is an infrared laser diode emitting at typically 810 nm with rated output power of 500

mW cw, in a standard 5.6 mm TO package with integrated monitor photodiode and flat window

cap.

Parameter

Symbol

Values

Unit

Min.

Max.

Output power

Po

500

mW

LD Reverse Voltage

2

V

PD Reverse Voltage

-

V

Operating Temperature

- 10

+ 50

°C

Storage Temperature

- 40

+ 85

°C

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Emission Wavelength

λ

peak

807

810

813

nm

Threshold Current

70

mA

Operating Current

560

mA

Operating Voltage

1.9

V

Beam Divergence

(FWHM)

Parallel

Ө

II

10

deg.

Perpendicular

31

deg.

Slope Efficiency (375mW-125mW)

η

0.8

1.1

mW/mA

Chip size

300*600

µm

PD Monitor Current

0.6

2.5

mA

rev.1.0 13.07.2016