M54519 datasheet(2/4 Pages) MITSUBISHI

2 / 4 page

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54519P/FP

7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75

°C)

V (BR) CEO

hFE

Parameter

—

0.5

Limits

min

typ

max

Symbol

Unit

—

400

200

—

0.3

1000

—

1.3

1.0

0.8

6000

—

2.4

1.6

1.8

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ+

max

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

—

400

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

Ω

Measured device

INPUT

OUTPUT

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

µs, tr = 6ns, tf = 6ns, ZO = 50Ω

VP = 8VP-P

(2) Input-output conditions : RL = 25

Ω, VO = 10V

(3) Electrostatic capacity CL includes floating capacitance at

connections and input capacitance at probes

VIL

Output voltage

“H” input voltage

“L” input voltage

VIH

Duty Cycle

P : no more than 8%

FP : no more than 6%

IC ≤ 400mA

IC ≤ 200mA

Duty Cycle

P : no more than 30%

FP : no more than 25%

Collector current

(Current per 1 cir-

cuit when 7 circuits

are coming on si-

multaneously)

Collector-emitter breakdown voltage

Input current

DC amplification factor

ICEO = 100

µA

VI = 8V, IC = 400mA

VI = 5V, IC = 200mA

VI = 17V

VCE = 4V, IC = 400mA, Ta = 25

°C

VCE (sat)

Collector-emitter saturation voltage

Turn-on time

Turn-off time

ton

toff

CL = 15pF (note 1)

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75

°C)

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25

°C)

ton

50%

toff

INPUT

OUTPUT

M54519 Datenblatt(PDF) 2 Page - Mitsubishi Electric Semiconductor

M54519 Datenblatt(HTML) 2 Page - Mitsubishi Electric Semiconductor

Html Pages

1 2 3 4

Datenblatt Download

Link URL