| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
M-System Co.,Ltd. |
LPA-12P1W-R
|
118Kb/3P
|
Power Transducer Series L-UNIT
|
|
LPAU-112P1W-R
|
114Kb/3P
|
Power Transducer Series L-UNIT
|
|
LPAU-412P1W-R
|
114Kb/3P
|
Power Transducer Series L-UNIT
|
|
LRP-12P1W-R
|
137Kb/5P
|
Power Transducer Series L-UNIT
|
|
MEPA-12P1W-R
|
120Kb/4P
|
Plug-in Signal Conditioners M-UNIT
|
|
MEPF-12P1W-R
|
120Kb/4P
|
Plug-in Signal Conditioners M-UNIT
|
| Search Partnumber :
Start with "12P1W-R" -
Total : 28 ( 1/2 Page) |
Unisonic Technologies |
12P10
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
|
12P10
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
VBsemi Electronics Co.,... |
12P10
|
1Mb/9P |
P-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
12P10-TN3-R
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
VBsemi Electronics Co.,... |
12P10-TN3-R
|
1Mb/9P |
P-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
12P10-TN3-T
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
|
12P10G-AA3-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-S08-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
SHENZHEN DOINGTER SEMIC... |
12P10G-S08-R
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
Unisonic Technologies |
12P10G-TM3-T
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
|
12P10G-TM3-T
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-TMS-T
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-TN3-R
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
|
12P10G-TN3-R
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
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