| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Unisonic Technologies |
18T10
|
163Kb/3P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
VBsemi Electronics Co.,... |
18T10AGJ-HF
|
1Mb/9P
|
N-Channel 100-V (D-S) MOSFET
|
Unisonic Technologies |
18T10G-TN3-R
|
163Kb/3P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
18T10G-TN3-T
|
163Kb/3P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
VBsemi Electronics Co.,... |
18T10GJ
|
1Mb/9P
|
N-Channel 100-V (D-S) MOSFET
|
Unisonic Technologies |
18T10L-TN3-R
|
163Kb/3P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
18T10L-TN3-T
|
163Kb/3P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
| Search Partnumber :
Start with "18T1" -
Total : 100 ( 1/5 Page) |
New Jersey Semi-Conduct... |
18T0035
|
59Kb/1P |
Schottky Rectifiers
|
|
18T0035
|
59Kb/1P |
Schottky Rectifiers
|
|
18T0035
|
59Kb/1P |
Schottky Rectifiers
|
Unisonic Technologies |
18T10
|
163Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
VBsemi Electronics Co.,... |
18T10AGJ-HF
|
1Mb/9P |
N-Channel 100-V (D-S) MOSFET
|
Unisonic Technologies |
18T10G-TN3-R
|
163Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
18T10G-TN3-T
|
163Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
VBsemi Electronics Co.,... |
18T10GJ
|
1Mb/9P |
N-Channel 100-V (D-S) MOSFET
|
Unisonic Technologies |
18T10L-TN3-R
|
163Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
|
18T10L-TN3-T
|
163Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Satco Products, Inc. |
18T2/27
|
129Kb/1P |
18 watt; Mini Spiral Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts; 3-pack
|
|
18T2/27
|
124Kb/1P |
18 watt; Mini Spiral Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts
|
|
18T2/27
|
125Kb/1P |
18 watt; Mini Spiral Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts; 8-pack
|
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