| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
New Jersey Semi-Conduct... |
2N656
|
142Kb/1P
|
NPN SILICON PLANAR TRANSISTOR
|
Seme LAB |
2N6560
|
11Kb/1P
|
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
Inchange Semiconductor ... |
2N6560
|
262Kb/2P
|
isc Silicon NPN Power Transistor
|
Seme LAB |
2N6561
|
16Kb/1P
|
Bipolar NPN Device in a Hermetically sealed TO3
|
Inchange Semiconductor ... |
2N6561
|
262Kb/2P
|
isc Silicon NPN Power Transistor
|
Boca Semiconductor Corp... |
2N6564
|
31Kb/1P
|
SCRs (Silicon Controlled Rectifiers)
|
Central Semiconductor C... |
2N6564
|
22Kb/1P
|
0.8 to 110 Amperes RMS 15 to 1200 Volts
|
New Jersey Semi-Conduct... |
2N6564
|
44Kb/1P
|
Silicon Controlled Rectifiers
|
Boca Semiconductor Corp... |
2N6565
|
31Kb/1P
|
SCRs (Silicon Controlled Rectifiers)
|
Central Semiconductor C... |
2N6565
|
22Kb/1P
|
0.8 to 110 Amperes RMS 15 to 1200 Volts
|
Littelfuse |
2N6565
|
199Kb/12P
|
Sensitive SCRs (0.8 A to 10 A)
|
New Jersey Semi-Conduct... |
2N6565
|
44Kb/1P
|
Silicon Controlled Rectifiers
|
List of Unclassifed Man... |
2N6565
|
205Kb/12P
|
RoHS Compliant
|
|
2N6565
|
205Kb/12P
|
RoHS Compliant
|
New Jersey Semi-Conduct... |
2N6566
|
133Kb/1P
|
SILICON EPITAXIAL JUNCTION
|
|
2N6567
|
133Kb/1P
|
SILICON EPITAXIAL JUNCTION
|
Mospec Semiconductor |
2N6569
|
144Kb/3P
|
POWER TRANSISTORS(12A,40V,100W)
|
Central Semiconductor C... |
2N6569
|
51Kb/1P
|
POWER TRANSISTORS TO-3 CASE
|
Savantic, Inc. |
2N6569
|
119Kb/3P
|
Silicon NPN Power Transistors
|
Quanzhou Jinmei Electro... |
2N6569
|
156Kb/3P
|
Silicon NPN Power Transistors
|
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