| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
2SC3279
|
163Kb/3P
|
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
|
2SC3279
|
335Kb/3P
|
Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications
|
 SeCoS Halbleitertechnol... |
2SC3279
|
312Kb/2P
|
NPN Transistor Plastic-Encapsulate Transistors
|
|
2SC3279
|
295Kb/2P
|
NPN Plastic Encapsulated Transistor
|
 SHENZHEN YONGERJIA INDU... |
2SC3279
|
125Kb/1P
|
TRANSISTOR (NPN)
|
 Jiangsu Changjiang Elec... |
2SC3279
|
501Kb/3P
|
TO-92 Plastic-Encapsulate Transistors
|
 SHENZHEN KOO CHIN ELECT... |
2SC3279
|
311Kb/2P
|
TRANSISTOR (NPN)
|
 Micro Commercial Compon... |
2SC3279-L
|
266Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-L
|
364Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-L
|
364Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-M
|
266Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-M
|
364Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-N
|
266Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-N
|
364Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-P
|
266Kb/3P
|
NPN Silicon Epitaxial Transistors
|
|
2SC3279-P
|
364Kb/3P
|
NPN Silicon Epitaxial Transistors
|
 Toshiba Semiconductor |
2SC3279
|
335Kb/3P
|
Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications
|
 SeCoS Halbleitertechnol... |
2SC3279
|
295Kb/2P
|
NPN Plastic Encapsulated Transistor
|
|
2SC3279
|
295Kb/2P
|
NPN Plastic Encapsulated Transistor
|