| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
2SC5197
|
147Kb/2P
|
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)
|
|
2SC5197
|
121Kb/4P
|
Silicon NPN Triple Diffused Type Power Amplifier Applications
|
 Savantic, Inc. |
2SC5197
|
168Kb/4P
|
Silicon NPN Power Transistors
|
 Inchange Semiconductor ... |
2SC5197
|
300Kb/3P
|
isc Silicon NPN Power Transistor
|
 Savantic, Inc. |
2SC5197
|
170Kb/4P
|
Silicon NPN Power Transistors
|
 Toshiba Semiconductor |
2SC5197
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
|
2SC5197
|
121Kb/4P
|
Silicon NPN Triple Diffused Type Power Amplifier Applications
|
| Search Partnumber :
Start with "2SC5197" -
Total : 31 ( 1/2 Page) |
 Panasonic Semiconductor |
2SC5190
|
37Kb/2P |
Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)
|
 NEC |
2SC5191
|
57Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
 Inchange Semiconductor ... |
2SC5191
|
195Kb/14P |
Low Voltage Operation ,Low Phase Distortion
|
 Renesas Technology Corp |
2SC5191
|
219Kb/9P |
NPN SILICON RF TRANSISTOR
2004 |
 NEC |
2SC5191-T1
|
57Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
 Renesas Technology Corp |
2SC5191-T1B
|
219Kb/9P |
NPN SILICON RF TRANSISTOR
2004 |
 NEC |
2SC5191-T2
|
57Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
|
2SC5192
|
68Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
 Renesas Technology Corp |
2SC5192
|
222Kb/12P |
SILICON TRANSISTOR
1994 |
 NEC |
2SC5192-T1
|
68Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
 Renesas Technology Corp |
2SC5192-T1
|
222Kb/12P |
SILICON TRANSISTOR
1994 |
 NEC |
2SC5192-T2
|
68Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
 Renesas Technology Corp |
2SC5192-T2
|
222Kb/12P |
SILICON TRANSISTOR
1994 |