| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
2SC5359
|
150Kb/2P
|
NPN TRIPLE DIFFUSED TYPE (POWERAMPLIFIER APPLICATIONS)
|
 Inchange Semiconductor ... |
2SC5359
|
142Kb/4P
|
Silicon NPN Power Transistors
|
 Savantic, Inc. |
2SC5359
|
243Kb/4P
|
Silicon NPN Power Transistors
|
 Toshiba Semiconductor |
2SC5359
|
127Kb/4P
|
Power Amplifier Applications
|
|
2SC5359
|
128Kb/4P
|
Power Amplifier Applications
|
 Savantic, Inc. |
2SC5359
|
244Kb/4P
|
Silicon NPN Power Transistors
|
 New Jersey Semi-Conduct... |
2SC5359
|
127Kb/2P
|
Silicon NPN Power Transistor
|
 Toshiba Semiconductor |
2SC5359
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
|
2SC5359-O
|
128Kb/4P
|
Power Amplifier Applications
|
|
2SC5359-R
|
128Kb/4P
|
Power Amplifier Applications
|
|
2SC5359
|
127Kb/4P
|
Power Amplifier Applications
|