| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 JILIN SINO-MICROELECTRO... |
3DD4613H-R-T-B-A
|
230Kb/5P
|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4613H-R-T-N-C
|
230Kb/5P
|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-M-N-B
|
251Kb/6P
|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-M-N-C
|
251Kb/6P
|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-T-B-A
|
251Kb/6P
|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
|
3DD4623H-R-T-N-C
|
251Kb/6P
|
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
 M-System Co.,Ltd. |
CVR1-3H-R/CE
|
111Kb/4P
|
Plug-in Signal Conditioners M-UNIT
|
 Samsung semiconductor |
K4M281633H-RF1H
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RF1L
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RF75
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RG1H
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RG1L
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RG75
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RL1H
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RL1L
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RL75
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RN1H
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RN1L
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4M281633H-RN75
|
114Kb/12P
|
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
|
K4S641633H-RBE
|
112Kb/12P
|
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|