| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Unisonic Technologies |
4N60L-TND-R
|
408Kb/9P
|
4A, 600V N-CHANNEL POWER MOSFET
|
|
4N60L-TND-R
|
432Kb/9P
|
N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
4N60L-TND-R
|
262Kb/7P
|
N-CHANNEL JUNCTIN SILICON FET
|
|
4N60L-TND-R
|
250Kb/8P
|
N-CHANNEL POWER MOSFET
|
|
4N60L-TND-R
|
262Kb/7P
|
N-CHANNEL POWER MOSFET
|
|
4N60L-TND-R
|
236Kb/7P
|
N-CHANNEL POWER MOSFET
|
| Search Partnumber :
Start with "4N60L-TND-R" -
Total : 25 ( 1/2 Page) |
Unisonic Technologies |
4N60L-TN3-R
|
376Kb/8P |
4A, 600V N-CHANNEL POWER MOSFET
|
|
4N60L-TN3-R
|
408Kb/9P |
4A, 600V N-CHANNEL POWER MOSFET
|
|
4N60L-TN3-R
|
432Kb/9P |
N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
4N60L-TN3-R
|
253Kb/7P |
N-CHANNEL POWER MOSFET
|
|
4N60L-TN3-R
|
262Kb/7P |
N-CHANNEL JUNCTIN SILICON FET
|
|
4N60L-TN3-R
|
250Kb/8P |
N-CHANNEL POWER MOSFET
|
|
4N60L-TN3-R
|
262Kb/7P |
N-CHANNEL POWER MOSFET
|
|
4N60L-TN3-R
|
236Kb/7P |
N-CHANNEL POWER MOSFET
|
VBsemi Electronics Co.,... |
4N60L-TN3-R
|
1Mb/9P |
Power MOSFET
|
Unisonic Technologies |
4N60L-TN3-T
|
376Kb/8P |
4A, 600V N-CHANNEL POWER MOSFET
|
|
4N60L-T2Q-T
|
376Kb/8P |
4A, 600V N-CHANNEL POWER MOSFET
|
|
4N60L-T2Q-T
|
408Kb/9P |
4A, 600V N-CHANNEL POWER MOSFET
|
|
4N60L-T2Q-T
|
432Kb/9P |
N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
4N60L-T2Q-T
|
262Kb/7P |
N-CHANNEL JUNCTIN SILICON FET
|
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