| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Unisonic Technologies |
BAV199G-AE3-R
|
119Kb/2P
|
DUAL SURFACE MOUNT LOW LEAKAGE DIODE
|
|
BAV199G-AE3-R
|
117Kb/3P
|
DUAL SURFACE MOUNT LOW LEAKAGE DIODE
|
|
BAV99G-AE3-R
|
187Kb/4P
|
HIGH CONDUCTANCE ULTRA FAST DIODE
|
|
BAV99G-AE3-R
|
208Kb/4P
|
HIGH CONDUCTANCE ULTRA FAST DIODE
|
|
MMBT5089G-AE3-R
|
301Kb/6P
|
NPN GENERAL PURPOSE AMPLIFIER
|
|
MMBT5089G-AE3-R
|
336Kb/7P
|
NPN GENERAL PURPOSE AMPLIFIER
|
|
SK8509G-AE3-R
|
247Kb/6P
|
HALL-EFFECT SENSOR IC
|
|
SK8509G-AE3-R
|
272Kb/6P
|
HALL-EFFECT SENSOR IC
|
|
SK8509G-AE3-R
|
231Kb/6P
|
HALL-EFFECT SENSOR IC
|
|
UT2309G-AE3-R
|
224Kb/4P
|
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT2309G-AE3-R
|
491Kb/9P
|
P-Channel 30 V (D-S) MOSFET
|
 Unisonic Technologies |
UT3409G-AE3-R
|
202Kb/4P
|
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3409G-AE3-R
|
228Kb/4P
|
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 VBsemi Electronics Co.,... |
UT3409G-AE3-R
|
491Kb/9P
|
P-Channel 30 V (D-S) MOSFET
|
 Unisonic Technologies |
UT3419G-AE3-R
|
145Kb/3P
|
20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
UT3419G-AE3-R
|
204Kb/4P
|
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 VBsemi Electronics Co.,... |
UT3419G-AE3-R
|
472Kb/9P
|
P-Channel 20-V (D-S) MOSFET
|