| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Advanced Power Electron... |
AP9575H
|
77Kb/4P
|
P-CHANNEL ENHANCEMENT MODE
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Start with "AP9575H" -
Total : 38 ( 1/2 Page) |
 Advanced Power Electron... |
AP9575AGH
|
102Kb/4P |
Higher Gate-Source Voltage
|
 VBsemi Electronics Co.,... |
AP9575AGH
|
988Kb/8P |
P-Channel 60-V (D-S) MOSFET
|
 Advanced Power Electron... |
AP9575AGH,J-HF
|
104Kb/4P |
Higher Gate-Source Voltage, Simple Drive Requirement, Fast Switching Characteristic
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AP9575AGH-HF
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71Kb/5P |
Fast Switching Characteristic
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AP9575AGH-HF
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104Kb/4P |
Higher Gate-Source Voltage
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AP9575AGH-HF
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71Kb/5P |
Fast Switching Characteristic
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AP9575AGH-J
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102Kb/4P |
Higher Gate-Source Voltage
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AP9575AGI-HF
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100Kb/4P |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
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AP9575AGI-HF
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100Kb/4P |
Simple Drive Requirement
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AP9575AGI-HF
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99Kb/5P |
Fast Switching Characteristic
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AP9575AGJ-HF
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71Kb/5P |
Fast Switching Characteristic
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 SHENZHEN DOINGTER SEMIC... |
AP9575AGJ-HF
|
608Kb/4P |
P-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP9575AGJB
|
65Kb/5P |
Fast Switching Characteristic
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AP9575AGM-HF
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99Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9575AGM-HF
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99Kb/4P |
Simple Drive Requirement
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AP9575AGS-HF
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100Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9575AGS-HF
|
100Kb/4P |
Simple Drive Requirement
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AP9575GH
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103Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9575GH-HF
|
103Kb/4P |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
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