| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Jiangsu Donghai Semicon... |
B4N60
|
1Mb/11P
|
4A 600V N-channel Enhancement Mode Power MOSFET
Rev. 1.0 2017.05.14
|
SHENZHEN DOINGTER SEMIC... |
B4N60D
|
1Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
Jiangsu Donghai Semicon... |
B4NE60
|
1Mb/13P
|
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P
|
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P
|
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P
|
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P
|
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P
|
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P
|
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P
|
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P
|
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P
|
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P
|
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P
|
4A 650V N-channel Enhancement Mode Power MOSFET
|
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