| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
M-System Co.,Ltd. |
PPD-B4N3N-R
|
157Kb/5P
|
Plug-in Signal Conditioners M-UNIT
|
| Search Partnumber :
Start with "B4N3N-R" -
Total : 4 ( 1/1 Page) |
Jiangsu Donghai Semicon... |
B4N60
|
1Mb/11P |
4A 600V N-channel Enhancement Mode Power MOSFET
Rev. 1.0 2017.05.14 |
SHENZHEN DOINGTER SEMIC... |
B4N60D
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Jiangsu Donghai Semicon... |
B4NE60
|
1Mb/13P |
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P |
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P |
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P |
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P |
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE60
|
1Mb/13P |
4A 600V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P |
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P |
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P |
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P |
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P |
4A 650V N-channel Enhancement Mode Power MOSFET
|
|
B4NE65
|
1Mb/13P |
4A 650V N-channel Enhancement Mode Power MOSFET
|
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