| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 TOKYO KEISO CO.,LTD. |
BS20
|
1Mb/5P
|
Single-use ultrasonic flowmeter for liquids
Mar 2024
|
 Pro-Power |
BS20
|
106Kb/2P
|
Conduit Accessories
01/02/08 V1.0
|
 List of Unclassifed Man... |
BS20
|
107Kb/2P
|
Conduit Accessories
|
 Vestal Electronic Devic... |
BS20-720X300
|
20Kb/1P
|
Bare Staple Jumper Wire
|
|
BS20-875X175
|
20Kb/1P
|
Bare Staple Jumper Wire
|
 List of Unclassifed Man... |
BS20-H
|
107Kb/2P
|
Conduit Accessories
|
|
BS20-L
|
107Kb/2P
|
Conduit Accessories
|
 Pro-Power |
BS20/H
|
106Kb/2P
|
Conduit Accessories
01/02/08 V1.0
|
|
BS20/L
|
106Kb/2P
|
Conduit Accessories
01/02/08 V1.0
|
 List of Unclassifed Man... |
BS2011
|
70Kb/2P
|
GORE-SHIELD짰 GS2100 EMI Gasket is a conductive, adhesive backed, EMI gasketing material that is moderately soft and is approved for spacefl ight and military applications.
|
 Xtaltq Technologies Co.... |
BS2016A
|
231Kb/2P
|
Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package
|
|
BS2016AD3I505CN20
|
231Kb/2P
|
Typical 2.05 x 1.65 x 0.75 mm ceramic SMD package
|
 Shenzhen Bencent Electr... |
BS201N
|
225Kb/3P
|
Gas Discharge Tube
|
 NXP Semiconductors |
BS208
|
64Kb/12P
|
P-channel enhancement mode vertical D-MOS transistor
April 1995
|
 Diodes Incorporated |
BS208
|
62Kb/2P
|
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
DS21901 Rev. E-3
|
 General Semiconductor |
BS208
|
238Kb/5P
|
DMOS Transistors (P-Channel)
|
|
BS209
|
37Kb/2P
|
DMOS Transistors (P-Channel)
|
 Omega Engineering, Inc. |
BS20A
|
352Kb/1P
|
Thermocouple Terminals
|