| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Analog Devices |
ADA4097-1BUJZ-R5
|
517Kb/27P
|
50 V, 130 kHz, 32.5 關A, Robust, Over-The-Top Precision Op Amp
5/2021-Revision 0
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ADA4097-1BUJZ-R5
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1Mb/31P
|
50 V, 130 kHz, 32.5 關A per Channel, Robust, Over-The-Top, Precision Op Amps
Rev. A
|
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ADA4098-1BUJZ-R5
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1Mb/33P
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50 V, 1 MHz, 165 關A per Channel, Robust, Over-The-Top, Precision Op Amps
Rev. A
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ADA4098-1BUJZ-R5
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1Mb/33P
|
50 V, 1 MHz, 165 μA per Channel, Robust, Over-The-Top, Precision Op Amps
Rev. B
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ADA4099-1BUJZ-R5
|
1Mb/34P
|
50 V, 8 MHz, 1.5 mA per Channel, Robust, Over-The-Top, Precision Op Amps
1/2022-Rev. 0 to Rev. A
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| Search Partnumber :
Start with "BUJZ-R5" -
Total : 72 ( 1/4 Page) |
 NXP Semiconductors |
BUJ100
|
62Kb/8P |
Silicon Diffused Power Transistor
September 1999 Rev 1.000 |
 WeEn Semiconductors |
BUJ100
|
399Kb/10P |
Silicon Diffused Power Transistor
|
 NXP Semiconductors |
BUJ100AT
|
69Kb/9P |
Silicon Diffused Power Transistor
September 1999 Rev 1.000 |
|
BUJ100B
|
65Kb/8P |
Silicon Diffused Power Transistor
May 2001-Rev 1.000 |
|
BUJ100LR
|
155Kb/11P |
Silicon diffused power transistor
Rev. 01-12 August 2009 |
|
BUJ100LR
|
156Kb/12P |
NPN power transistor
Rev. 02-29 July 2010 |
|
BUJ100
|
149Kb/10P |
Silicon Diffused Power Transistor
September 1999 |
|
BUJ101A
|
18Kb/4P |
Silicon Diffused Power Transistor
August 1998 Rev 1.000 |
|
BUJ101AU
|
62Kb/8P |
Silicon Diffused Power Transistor
September 1999 Rev 1.000 |
|
BUJ101AX
|
21Kb/4P |
Silicon Diffused Power Transistor
August 1998 Rev 1.000 |
|
BUJ103
|
103Kb/12P |
Silicon Diffused Power Transistor
August 1998 |
|
BUJ103A
|
103Kb/12P |
Silicon Diffused Power Transistor
August 1998 |
 WeEn Semiconductors |
BUJ103A
|
504Kb/14P |
Silicon diffused power transistor
|
 NXP Semiconductors |
BUJ103AD
|
86Kb/12P |
Silicon diffused power transistor
Rev. 01-14 December 2004 |
 WeEn Semiconductors |
BUJ103AD
|
830Kb/10P |
Silicon diffused power transistor
|