| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Murata Manufacturing Co... |
CSTCC2M45G56-R0
|
182Kb/3P
|
no adjustment is necessary for os cillation circuits
|
 Murata Manufacturing Co... |
CSTCC2M45G56-R0
|
314Kb/2P
|
Crystal Units/MEMS Resonators
02/28/2024
|
| Search Partnumber :
Start with "C2M45G56-R0" -
Total : 19 ( 1/1 Page) |
 Cree, Inc |
C2M0025120D
|
969Kb/10P |
N-Channel Enhancement Mode
|
 WOLFSPEED, INC. |
C2M0025120D
|
893Kb/11P |
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 5, 04-2021 |
 Inchange Semiconductor ... |
C2M0025120D
|
346Kb/2P |
SiC N-Channel MOSFET
|
 Cree, Inc |
C2M0040120D
|
959Kb/10P |
N-Channel Enhancement Mode
|
 WOLFSPEED, INC. |
C2M0040120D
|
972Kb/11P |
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 3, 04-2021 |
 Inchange Semiconductor ... |
C2M0040120D
|
421Kb/2P |
SiC N-Channel MOSFET
|
 Cree, Inc |
C2M0040120D
|
961Kb/10P |
N-Channel Enhancement Mode
|
|
C2M0045170D
|
1Mb/10P |
Silicon Carbide Power MOSFET C2MTM MOSFET Technology
|
 WOLFSPEED, INC. |
C2M0045170D
|
977Kb/13P |
Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode
Rev. 1, May 2022 |
 Inchange Semiconductor ... |
C2M0045170D
|
417Kb/4P |
SiC N-Channel MOSFET
|
 Cree, Inc |
C2M0045170P
|
1Mb/10P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
 WOLFSPEED, INC. |
C2M0045170P
|
937Kb/12P |
Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode
Rev. 2, May 2022 |
 Cree, Inc |
C2M0080120D
|
869Kb/9P |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
|
C2M0080120D
|
482Kb/2P |
CREE Silicon Carbide MOSFET Evaluation Kit
|
 WOLFSPEED, INC. |
C2M0080120D
|
824Kb/10P |
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode
Rev. D, 09-2019 |
 Inchange Semiconductor ... |
C2M0080120D
|
342Kb/3P |
SiC N-Channel MOSFET
|
 WOLFSPEED, INC. |
C2M0080120D
|
822Kb/11P |
Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode
Rev. 6, October 2024 |
 Cree, Inc |
C2M0080120D
|
1Mb/10P |
Silicon Carbide Power MOSFET
|