| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Fairchild Semiconductor |
FDN338
|
85Kb/4P
|
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Shenzhen Tuofeng Semico... |
FDN338
|
2Mb/5P
|
P-Channel 20-V(D-S) MOSFET
Apr,2018 V1.0
|
Fairchild Semiconductor |
FDN338P
|
85Kb/4P
|
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
TECH PUBLIC Electronics... |
FDN338P
|
1Mb/3P
|
P-Channel 20-V(D-S) MOSFET
|
EVER SEMICONDUCTOR CO.,... |
FDN338P
|
572Kb/2P
|
SOT-23 Plastic-Encapsulate MOSFETS
Rev:2023A2
|
Shenzhen Jin Yu Semicon... |
FDN338P
|
1Mb/4P
|
20 V P-Channel Enhancement Mode MOSFET
|
Guangdong Youtai Semico... |
FDN338P
|
601Kb/2P
|
SOT-23 Plastic-Encapsulate MOSFETS
|
VBsemi Electronics Co.,... |
FDN338P-NL
|
1Mb/9P
|
P-Channel 20-V (D-S) MOSFET
|
| Search Partnumber :
Start with "FDN338" -
Total : 59 ( 1/3 Page) |
Fairchild Semiconductor |
FDN335
|
210Kb/8P |
N-Channel 2.5V Specified PowerTrenchTM MOSFET
|
|
FDN335N
|
210Kb/8P |
N-Channel 2.5V Specified PowerTrenchTM MOSFET
|
Shenzhen Jin Yu Semicon... |
FDN335N
|
1Mb/4P |
20 V N-Channel Enhancement Mode MOSFET
|
Guangdong Youtai Semico... |
FDN335N
|
384Kb/3P |
SOT-23 Plastic-Encapsulate MOSFETS
|
EVER SEMICONDUCTOR CO.,... |
FDN335N
|
351Kb/3P |
SOT-23 Plastic-Encapsulate MOSFETS
Rev:2023A2 |
VBsemi Electronics Co.,... |
FDN335N-NL
|
1Mb/9P |
N-Channel 20 V (D-S) MOSFET
|
Fairchild Semiconductor |
FDN336
|
64Kb/5P |
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
|
Guangdong Youtai Semico... |
FDN336
|
399Kb/5P |
P-Channel 2.5 V (D-S) MOSFET
|
EVER SEMICONDUCTOR CO.,... |
FDN336
|
618Kb/5P |
P-Channel 2.5 V (D-S) MOSFET
Rev:2023A2 |
Fairchild Semiconductor |
FDN336P
|
64Kb/5P |
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
|
|
FDN336P
|
77Kb/5P |
Single P-Channel 2.5V Specified PowerTrench MOSFET
|
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