| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 IP SEMICONDUCTOR CO., L... |
IPT2008-CEB
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209Kb/4P
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High current density due to double mesa technology
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| Search Partnumber :
Start with "IPT2008-CEB" -
Total : 23 ( 1/2 Page) |
 IP SEMICONDUCTOR CO., L... |
IPT2008-CEA
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209Kb/4P |
High current density due to double mesa technology
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IPT2008-BEA
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209Kb/4P |
High current density due to double mesa technology
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IPT2008-BEB
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209Kb/4P |
High current density due to double mesa technology
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IPT2008-DEA
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209Kb/4P |
High current density due to double mesa technology
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IPT2008-DEB
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209Kb/4P |
High current density due to double mesa technology
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IPT2006-BEA
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209Kb/4P |
High current density due to double mesa technology
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IPT2006-BEB
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209Kb/4P |
High current density due to double mesa technology
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IPT2006-CEA
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209Kb/4P |
High current density due to double mesa technology
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IPT2006-CEB
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209Kb/4P |
High current density due to double mesa technology
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IPT2006-DEA
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209Kb/4P |
High current density due to double mesa technology
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IPT2006-DEB
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209Kb/4P |
High current density due to double mesa technology
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IPT20Q06-CEA
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208Kb/4P |
High current density due to double mesa technology
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IPT20Q06-CEB
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208Kb/4P |
High current density due to double mesa technology
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IPT20Q06-SEA
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208Kb/4P |
High current density due to double mesa technology
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IPT20Q06-SEB
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208Kb/4P |
High current density due to double mesa technology
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IPT20Q06-TEA
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208Kb/4P |
High current density due to double mesa technology
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IPT20Q06-TEB
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208Kb/4P |
High current density due to double mesa technology
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IPT20Q08-CEA
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208Kb/4P |
High current density due to double mesa technology
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IPT20Q08-CEB
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208Kb/4P |
High current density due to double mesa technology
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