| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 IXYS Corporation |
IXTP02N50D
|
93Kb/2P
|
High Voltage MOSFET N-Channel, Depletion Mode
|
|
IXTP02N50D
|
213Kb/4P
|
High Voltage Power MOSFET
|
| Search Partnumber :
Start with "IXTP02N50D" -
Total : 100 ( 1/5 Page) |
 IXYS Corporation |
IXTP02N120P
|
134Kb/4P |
N-Channel Enhancement Mode Avalanche Rated
|
 Inchange Semiconductor ... |
IXTP02N120P
|
315Kb/2P |
isc N-Channel MOSFET Transistor
|
 IXYS Corporation |
IXTP01N100
|
51Kb/2P |
High Voltage MOSFET
|
|
IXTP01N100D
|
51Kb/2P |
High Voltage MOSFET
|
|
IXTP01N100D
|
93Kb/2P |
N-Channel, Depletion Mode High Voltage MOSFET
|
|
IXTP01N100D
|
164Kb/6P |
Power MOSFET
|
|
IXTP03N90P
|
217Kb/5P |
N-Channel Enhancement Mode
|
|
IXTP05N100
|
541Kb/4P |
High Voltage MOSFET
|
|
IXTP05N100
|
190Kb/5P |
N-Channel Enhancement Mode Avalanche Rated
|
 Inchange Semiconductor ... |
IXTP05N100
|
294Kb/2P |
isc N-Channel MOSFET Transistor
|
 IXYS Corporation |
IXTP05N100M
|
113Kb/4P |
N-Channel Enhancement Mode Avalanche Rated
|
 Inchange Semiconductor ... |
IXTP05N100M
|
293Kb/2P |
isc N-Channel MOSFET Transistor
|
 IXYS Corporation |
IXTP05N100P
|
164Kb/5P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
|
IXTP05N100P
|
283Kb/7P |
Fast Intrinsic Diode
|
|
IXTP06N120P
|
121Kb/4P |
Polar Power MOSFET
|
|
IXTP06N120P
|
270Kb/5P |
N-Channel Enhancement Mode Power MOSFET
|
|
IXTP08N100D2
|
183Kb/5P |
Depletion Mode MOSFET
|
|
IXTP08N100D2
|
284Kb/7P |
N-Channel MOSFET
|