| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 ON Semiconductor |
NP2300SAMCT3G
|
141Kb/7P
|
50A, Ultra Low Capacitance TSPD
May, 2009 ??Rev. P2
|
| Search Partnumber :
Start with "NP2300SAMCT3G" -
Total : 100 ( 1/5 Page) |
 ON Semiconductor |
NP2300SAT3G
|
52Kb/5P |
Thyristor Surge Protectors High Voltage Bidirectional
November, 2006 ??Rev. 0 |
|
NP2300SBMCT3G
|
135Kb/7P |
80A, Ultra Low Capacitance TSPD
September, 2008 ??Rev. 1 |
|
NP2300SBT3G
|
52Kb/5P |
Thyristor Surge Protectors High Voltage Bidirectional
November, 2006 ??Rev. 0 |
|
NP2300SCMCT3G
|
139Kb/7P |
100A, Ultra Low Capacitance TSPD
April, 2009 ??Rev. 3 |
|
NP2300SCT3G
|
52Kb/5P |
Thyristor Surge Protectors High Voltage Bidirectional
November, 2006 ??Rev. 0 |
 Yamaichi Electronics Co... |
NP236-102002-1
|
68Kb/1P |
Pin Grid Array /Zero Insertion Force (PGA/ZIF - Interstitial)
|
|
NP236-102002-2
|
68Kb/1P |
Pin Grid Array /Zero Insertion Force (PGA/ZIF - Interstitial)
|
 Renesas Technology Corp |
NP23N06YDG
|
226Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
NP23N06YDG
|
5Mb/6P |
Product Scout Automotive
|
|
NP23N06YDG-E1-AY
|
226Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
NP23N06YDG-E2-AY
|
226Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
NP23N06YDG
|
226Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
NP20N10YDF
|
5Mb/6P |
Product Scout Automotive
|
|
NP20N10YDF-E1-AY*1
|
125Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
NP20N10YDF-E2-AY*1
|
125Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
NP20N10YDF
|
125Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
|
NP20P04SLG
|
1Mb/8P |
-40V – -20A – P-channel Power MOS FET Application : Automotive
Jun. 10, 2022 |
 Inchange Semiconductor ... |
NP20P04SLG
|
299Kb/2P |
isc P-Channel MOSFET Transistor
|
 Renesas Technology Corp |
NP20P04SLG-E1-AY
|
1Mb/8P |
-40V – -20A – P-channel Power MOS FET Application : Automotive
Jun. 10, 2022 |