| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 NOVOSENSE Microelectron... |
NSM2016
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-20B5F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-20U5F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-25B3F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-30B3F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-30U3F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-45B5F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-50B3F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-50B5F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|
|
NSM2016-50U5F-DSPR
|
3Mb/29P
|
all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection
2023/12/08
|