| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Epson Company |
SG8002DB
|
151Kb/1P
|
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR
|
| Search Partnumber :
Start with "SG8002DB" -
Total : 22 ( 1/2 Page) |
 Epson Company |
SG8002DC
|
151Kb/1P |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR
|
 List of Unclassifed Man... |
SG8002CE
|
104Kb/1P |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR
|
|
SG8002JC
|
19Kb/1P |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR
|
 Toshiba Semiconductor |
SG800EX25
|
124Kb/2P |
GATE TURN-OFF THYRISTOR
|
 Solid State Optronic |
SG8020
|
1Mb/15P |
IGBT Gate Drive Optocouple
|
 Solid State Inc |
SG8020
|
1Mb/15P |
High Common Mode Rejection: 25kV/μS
Rev03 |
 Solid State Optronic |
SG8050
|
734Kb/15P |
IGBT Gate Drive Optocoupler
|
 Solid State Inc |
SG8050
|
756Kb/15P |
IGBT / MOSFET Gate Drives
Rev03 |
 Solid State Optronic |
SG8080
|
745Kb/15P |
IGBT Gate Drive Optocoupler
|
 Solid State Inc |
SG8080
|
767Kb/15P |
2A Output Current
|
 Richco, Inc. |
SG8-250-81
|
37Kb/1P |
SCREW GROMMET
|
 List of Unclassifed Man... |
SG83526
|
1Mb/42P |
PACKAGE INFORMATION
|
 Rohm |
SG8401WN
|
960Kb/5P |
1200V 40A Insulated Gate Bipolar Transistor
2024.6 - Rev.A |
|
SG8403WN
|
947Kb/5P |
1200V 200A Insulated Gate Bipolar Transistor
2024.6 - Rev.A |
|
SG8405WN
|
959Kb/5P |
1200V 10A Insulated Gate Bipolar Transistor
2024.6 - Rev.A |
|
SG8406WN
|
960Kb/5P |
1200V 50A Insulated Gate Bipolar Transistor
2024.6 - Rev.A |
|
SG8407WN
|
947Kb/5P |
1200V 100A Insulated Gate Bipolar Transistor
2024.6 - Rev.A |
|
SG8408WN
|
948Kb/5P |
1200V 75A Insulated Gate Bipolar Transistor
2024.6 - Rev.A |
|
SG8409WN
|
968Kb/5P |
1200V 35A Insulated Gate Bipolar Transistor
2024.6 - Rev.A |