| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Stanson Technology |
ST3406
|
237Kb/6P
|
N Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
ST3406
|
493Kb/9P
|
N-Channel 30-V (D-S) MOSFET
|
|
ST3406S23G
|
493Kb/9P
|
N-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
ST3406S23RG
|
237Kb/6P
|
N Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
ST3406S23RG
|
493Kb/9P
|
N-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
ST3406SRG
|
325Kb/6P
|
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
VBsemi Electronics Co.,... |
ST3406SRG
|
493Kb/9P
|
N-Channel 30-V (D-S) MOSFET
|
| Search Partnumber :
Start with "ST3406" -
Total : 20 ( 1/1 Page) |
Stanson Technology |
ST3400
|
352Kb/6P |
N Channel Enhancement Mode MOSFET
|
|
ST3400S23RG
|
352Kb/6P |
N Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
ST3400S23RG
|
493Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
List of Unclassifed Man... |
ST3400S23RG_V2
|
402Kb/6P |
N Channel Enhancement Mode MOSFET
|
Stanson Technology |
ST3400SRG
|
547Kb/6P |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
VBsemi Electronics Co.,... |
ST3400SRG
|
493Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
ST3401
|
200Kb/6P |
P Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
ST3401
|
490Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
Stanson Technology |
ST3401M23RG
|
174Kb/6P |
P Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
ST3401M23RG
|
491Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
List of Unclassifed Man... |
ST3401M23RG_V2
|
174Kb/6P |
P Channel Enhancement Mode MOSFET
|
Stanson Technology |
ST3401S23RG
|
200Kb/6P |
P Channel Enhancement Mode MOSFET
|
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