| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Unisonic Technologies |
UD06122G-K10-3030-R
|
361Kb/10P
|
Stable with Low ESR Output Ceramic Capacitors
|
| Search Partnumber :
Start with "UD06122G-K10-3030-R" -
Total : 52 ( 1/3 Page) |
ShenZhen XinDeYi Electr... |
UD0002U
|
131Kb/8P |
N-Channel Enhancement Mode Field Effect Transistor
|
|
UD0006
|
543Kb/4P |
N-Ch 100V Fast Switching MOSFETs
|
Unitpower Technology Li... |
UD0006
|
543Kb/4P |
N-Ch 100V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electr... |
UD0008
|
734Kb/4P |
N-Ch 100V Fast Switching MOSFETs
|
Unitpower Technology Li... |
UD0008
|
734Kb/4P |
N-Ch 100V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electr... |
UD0016
|
728Kb/4P |
N-Ch 100V Fast Switching MOSFETs
|
Unitpower Technology Li... |
UD0016
|
728Kb/4P |
N-Ch 100V Fast Switching MOSFETs
|
|
UD0018
|
781Kb/4P |
N-Ch 100V Fast Switching MOSFETs
|
SHENZHEN DOINGTER SEMIC... |
UD0018
|
862Kb/4P |
N-Channel MOSFET uses advanced SGT technology
|
|
UD0018A
|
1Mb/4P |
N-Channel MOSFET uses advanced SGT technology
|
|
UD004
|
2Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
Unitpower Technology Li... |
UD01N65
|
688Kb/4P |
N-Ch 650V Fast Switching MOSFETs
|
VBsemi Electronics Co.,... |
UD01N65
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
UD020PG
|
957Kb/4P |
P-Channel MOSFET uses advanced trench technology
|
Unitpower Technology Li... |
UD02N65
|
698Kb/4P |
N-Ch 650V Fast Switching MOSFETs
|
VBsemi Electronics Co.,... |
UD02N65
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
UD02N65
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Unitpower Technology Li... |
UD03N65
|
761Kb/4P |
N-Ch 650V Fast Switching MOSFETs
|
VBsemi Electronics Co.,... |
UD03N65
|
1Mb/9P |
Power MOSFET
|
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