| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Unisonic Technologies |
UT4446
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
|
UT4446-S08-R
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
|
UT4446-S08-T
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
|
UT4446G-S08-R
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT4446G-S08-R
|
1Mb/9P
|
N-Channel 30-V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
UT4446G-S08-R
|
1Mb/4P
|
N-Channel MOSFET uses advanced trench technology
|
 Unisonic Technologies |
UT4446G-S08-T
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
 SHENZHEN DOINGTER SEMIC... |
UT4446G-SO8-R
|
920Kb/5P
|
N-Channel MOSFET uses advanced trench technology
|
 Unisonic Technologies |
UT4446L-S08-R
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT4446L-S08-R
|
1Mb/9P
|
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UT4446L-S08-T
|
202Kb/5P
|
N-CHANNEL ENHANCEMENT MODE
|
|
UT4446
|
214Kb/4P
|
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|