| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
SHENZHEN DOINGTER SEMIC... |
VSO040N04MS
|
1Mb/4P
|
N-Channel MOSFET uses advanced trench technology
|
| Search Partnumber :
Start with "VSO040N04MS" -
Total : 100 ( 1/5 Page) |
SHENZHEN DOINGTER SEMIC... |
VSO040N04MD
|
1Mb/4P |
Dual N-Channel MOSFET uses advanced trench technology
|
|
VSO045N06MS
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
|
VSO013N04MS
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
|
VSO013N10MS
|
577Kb/4P |
N-Channel MOSFET uses advanced SGT technology
|
VBsemi Electronics Co.,... |
VSO014N10MS
|
469Kb/9P |
N-Channel 100 V (D-S) MOSFET
|
|
VSO025N10MS
|
469Kb/9P |
N-Channel 100 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
VSO030C04MC
|
3Mb/8P |
N-Chanel and P-Channel MOSFET use advanced trench technology
|
|
VSO050M04MD
|
2Mb/5P |
N-Chanel and P-Channel MOSFET use advanced trench technology
|
VBsemi Electronics Co.,... |
VSO100N10MS
|
469Kb/9P |
N-Channel 100 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
VSO200P06MD
|
1Mb/5P |
P-Channel MOSFET uses advanced trench technology
|
Sensortechnics GmbH |
VSOEPA10-50-100
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPA10-50-15
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPA10-50-50
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPA30-50-30
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPS10-50-100
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPS10-50-15
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPS10-50-50
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPS30-50-100
|
98Kb/4P |
Electronic pressure controllers
|
|
VSOEPS30-50-15
|
98Kb/4P |
Electronic pressure controllers
|
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