01G-AE3-R Datenblatt, PDF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Unisonic Technologies	MMBT4401G-AE3-R	274Kb/6P	NPN GENERAL PURPOSE AMPLIFIER
	SK1901G-AE3-R	196Kb/8P	HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
	SK1901G-AE3-R	218Kb/8P	HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
	SK1901G-AE3-R	222Kb/8P	HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
	UF601G-AE3-R	173Kb/3P	0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
	UF601G-AE3-R	194Kb/3P	N-CHANNEL DEPLETION-MODE POWER MOSFET
	UT2301G-AE3-R	184Kb/4P	2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	UT2301G-AE3-R	233Kb/5P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
VBsemi Electronics Co.,...	UT2301G-AE3-R	1Mb/9P	P-Channel 20-V (D-S) MOSFET
Unisonic Technologies	UT3401G-AE3-R	297Kb/5P	P-CHANNEL ENHANCEMENT MODE
Unisonic Technologies	UT3401G-AE3-R	300Kb/5P	P-CHANNEL ENHANCEMENT MOSFET
VBsemi Electronics Co.,...	UT3401G-AE3-R	491Kb/9P	P-Channel 30 V (D-S) MOSFET
Unisonic Technologies	UT4101G-AE3-R	285Kb/4P	P-CHANNEL ENHANCEMENT MODE
Unisonic Technologies	UT4101G-AE3-R	275Kb/4P	P-CHANNEL ENHANCEMENT MODE
VBsemi Electronics Co.,...	UT4101G-AE3-R	472Kb/9P	P-Channel 20-V (D-S) MOSFET
Unisonic Technologies	UT6401G-AE3-R	328Kb/5P	P-CHANNEL POWER MOSFET
	UT7401G-AE3-R	283Kb/4P	1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	UT7401G-AE3-R	277Kb/4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
VBsemi Electronics Co.,...	UT7401G-AE3-R	491Kb/9P	P-Channel 30 V (D-S) MOSFET

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