| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Unisonic Technologies |
12P10
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
|
12P10
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
VBsemi Electronics Co.,... |
12P10
|
1Mb/9P |
P-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
12P10-TN3-R
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
VBsemi Electronics Co.,... |
12P10-TN3-R
|
1Mb/9P |
P-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
12P10-TN3-T
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
|
12P10G-AA3-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-S08-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
SHENZHEN DOINGTER SEMIC... |
12P10G-S08-R
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
Unisonic Technologies |
12P10G-TM3-T
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
|
12P10G-TM3-T
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-TMS-T
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-TN3-R
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
|
12P10G-TN3-R
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
|
12P10G-TN3-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-TN3-T
|
256Kb/7P |
100V P-CHANNEL MOSFET
|
|
12P10G-TND-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-TQ2-R
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
|
12P10G-TQ2-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
12P10G-TQ2-T
|
270Kb/6P |
9.4A, 100V P-CHANNEL POWER MOSFET
|
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