| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Hitachi Semiconductor |
1SS270
|
23Kb/5P |
Silicon Epitaxial Planar Diode for High Speed Switching
|
Leshan Radio Company |
1SS270
|
82Kb/3P |
SWITCHING DIODES
|
Renesas Technology Corp |
1SS270
|
75Kb/5P |
Silicon Epitaxial Planar Diode for High Speed Switching
|
SEMTECH ELECTRONICS LTD... |
1SS270
|
313Kb/3P |
SILICON EPITAXIAL PLANAR DIODE
|
|
1SS270
|
584Kb/3P |
SILICON EPITAXIAL PLANAR DIODE
|
Hitachi Semiconductor |
1SS270A
|
23Kb/5P |
Silicon Epitaxial Planar Diode for High Speed Switching
|
Renesas Technology Corp |
1SS270A
|
75Kb/5P |
Silicon Epitaxial Planar Diode for High Speed Switching
|
SEMTECH ELECTRONICS LTD... |
1SS270A
|
166Kb/2P |
SILICON EPITAXIAL PLANAR DIODE
|
Shenzhen Luguang Electr... |
1SS270A
|
202Kb/2P |
Low capacitance (C = 3.0pF max)
|
EIC discrete Semiconduc... |
1SS270A
|
82Kb/2P |
HIGH SPEED SWITCHING DIODE
|
SEMTECH ELECTRONICS LTD... |
1SS270
|
584Kb/3P |
SILICON EPITAXIAL PLANAR DIODE
|
Toshiba Semiconductor |
1SS271
|
129Kb/3P |
VHF~UHF MIXER APPLICATION
|
|
1SS272
|
131Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
|
1SS272
|
197Kb/3P |
Ultra High Speed Switching Application
|
Guangdong Kexin Industr... |
1SS272
|
35Kb/1P |
Ultar High Speed Switching Applications
|
Toshiba Semiconductor |
1SS272TE85R
|
207Kb/3P |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
1SS272
|
197Kb/3P |
Ultra High Speed Switching Application
|
|
1SS272
|
229Kb/4P |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Hitachi Semiconductor |
1SS277
|
23Kb/5P |
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
|
SEMTECH ELECTRONICS LTD... |
1SS277WT
|
130Kb/1P |
BAND SWITCHING DIODE
|
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