| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Sanyo Semicon Device |
1SS350
|
57Kb/2P |
UHF Detector, Mixer Applications
|
Guangdong Kexin Industr... |
1SS350
|
34Kb/1P |
Sillicon Epitaxial Schottky Barrier Diode
|
Sanyo Semicon Device |
1SS351
|
56Kb/2P |
UHF Detector, Mixer Applications
|
Guangdong Kexin Industr... |
1SS351
|
34Kb/1P |
Sillicon Epitaxial Schottky Barrier Diode
|
Sanyo Semicon Device |
1SS351
|
358Kb/6P |
UHF Detector, Mixer Applications
|
ON Semiconductor |
1SS351
|
257Kb/6P |
Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP
September, 2013 |
|
1SS351
|
257Kb/6P |
Schottky Barrier Diode
September, 2013 |
|
1SS351-TB-E
|
257Kb/6P |
Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP
September, 2013 |
|
1SS351-TB-E
|
257Kb/6P |
Schottky Barrier Diode
September, 2013 |
Sanyo Semicon Device |
1SS351
|
358Kb/6P |
UHF Detector, Mixer Applications
|
Toshiba Semiconductor |
1SS352
|
121Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
|
1SS352
|
203Kb/3P |
Ultra High Speed Switching Application
|
Guangdong Kexin Industr... |
1SS352
|
33Kb/1P |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE
|
SEMTECH ELECTRONICS LTD... |
1SS352
|
257Kb/3P |
SILICON EPITAXIAL PLANAR DIODE
|
Toshiba Semiconductor |
1SS352
|
214Kb/3P |
Ultra High Speed Switching Application
|
SHIKUES Electronics |
1SS352
|
398Kb/3P |
Silicon Epitaxial Planar Switching Diode
|
Toshiba Semiconductor |
1SS352TPH3
|
214Kb/3P |
Ultra High Speed Switching Application
|
|
1SS352
|
203Kb/3P |
Ultra High Speed Switching Application
|
Rohm |
1SS353
|
61Kb/2P |
Silicon Epitaxial Planar High-Speed Switching Diodes
|
Guangdong Kexin Industr... |
1SS353
|
34Kb/1P |
High- Speed Switching Diode
|
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