| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Seme LAB |
2N2696
|
14Kb/1P |
Bipolar PNP Device in a Hermetically sealed TO18 Metal
|
 Honeywell Solid State E... |
2N2698
|
230Kb/2P |
SILICON TRANSISTOR
|
 Microsemi Corporation |
2N2604
|
66Kb/2P |
PNP SILICON LOW POWER TRANSISTOR
|
|
2N2604
|
157Kb/4P |
PNP SILICON LOW POWER TRANSISTOR
|
 Central Semiconductor C... |
2N2604
|
54Kb/1P |
Small Signal Transistors
|
 Semicoa Semiconductor |
2N2604
|
30Kb/1P |
Chip Type 2C2605 Geometry 0220 Polarity NPN
|
 Microsemi Corporation |
2N2604UB
|
157Kb/4P |
PNP SILICON LOW POWER TRANSISTOR
|
|
2N2604
|
157Kb/4P |
PNP SILICON LOW POWER TRANSISTOR
|
 Central Semiconductor C... |
2N2604
|
58Kb/2P |
PNP SILICON TRANSISTOR
|
 Semicoa Semiconductor |
2N2605
|
30Kb/1P |
Chip Type 2C2605 Geometry 0220 Polarity NPN
|
 Central Semiconductor C... |
2N2605
|
54Kb/1P |
Small Signal Transistors
|
 Microsemi Corporation |
2N2605
|
66Kb/2P |
PNP SILICON LOW POWER TRANSISTOR
|
|
2N2605
|
157Kb/4P |
PNP SILICON LOW POWER TRANSISTOR
|
 Seme LAB |
2N2605CSM
|
14Kb/1P |
Bipolar PNP Device in a Hermetically sealed LCC1
|
 Microsemi Corporation |
2N2605UB
|
157Kb/4P |
PNP SILICON LOW POWER TRANSISTOR
|
 Intersil Corporation |
2N2607
|
4Mb/122P |
P-CHANNEL JFET
|
 Microsemi Corporation |
2N2608
|
56Kb/1P |
P-CHANNEL J-FET
|
 Central Semiconductor C... |
2N2608
|
58Kb/1P |
Junction FETs Low Frequency/ Low Noise
|
 Intersil Corporation |
2N2608
|
4Mb/122P |
P-CHANNEL JFET
|
 Microsemi Corporation |
2N2608
|
44Kb/1P |
P-CHANNEL J-FET
|