| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 NXP Semiconductors |
2N2906
|
52Kb/8P |
PNP switching transistors
1997 Jun 02 |
 STMicroelectronics |
2N2906
|
233Kb/4P |
1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS
|
 Semicoa Semiconductor |
2N2906
|
29Kb/1P |
Chip Type 2C2904A Geometry 0600 Polarity PNP
|
 Siemens Semiconductor G... |
2N2906
|
41Kb/2P |
PNP SILICON PLANAR TRANSISTORS
|
 Micro Electronics |
2N2906
|
103Kb/2P |
PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
|
 Raytheon Company |
2N2906
|
777Kb/12P |
Medium Current General Purpose Amplifiers and Switches
|
 Seme LAB |
2N2906
|
239Kb/3P |
SILICON PLANAR EPITAXIAL PNP TRANSISTOR
|
 Central Semiconductor C... |
2N2906
|
531Kb/2P |
PNP SILICON TRANSISTOR
|
 New Jersey Semi-Conduct... |
2N2906
|
349Kb/2P |
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
|
 Comset Semiconductor |
2N2906
|
151Kb/3P |
GENERAL PURPOSE AMPLIFIERS TRANSISTORS
|
 Continental Device Indi... |
2N2906
|
147Kb/4P |
PNP SILICON PLANAR SWITCHING TRANSISTORS
|
 Central Semiconductor C... |
2N2906
|
531Kb/2P |
PNP SILICON TRANSISTOR
|
 NXP Semiconductors |
2N2906A
|
52Kb/8P |
PNP switching transistors
1997 Jun 02 |
 Microsemi Corporation |
2N2906A
|
105Kb/6P |
RADIATION HARDENED
|
|
2N2906A
|
68Kb/2P |
PNP SMALL SIGNAL SILICON TRANSISTOR
|
 Boca Semiconductor Corp... |
2N2906A
|
44Kb/2P |
PNP SILICON PLANAR SWITCHING TRANSISTORS
|
 Micro Electronics |
2N2906A
|
103Kb/2P |
PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
|
 Siemens Semiconductor G... |
2N2906A
|
130Kb/5P |
PNP SILICON PLANAR TRANSISTORS
|
 Central Semiconductor C... |
2N2906A
|
33Kb/1P |
Small Signal Transistors
|
 Raytheon Company |
2N2906A
|
777Kb/12P |
Medium Current General Purpose Amplifiers and Switches
|