| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Mitsubishi Electric Sem... |
2SC3133
|
133Kb/3P |
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
|
 Advanced Semiconductor |
2SC3133
|
69Kb/1P |
NPN SILICON RF POWER TRANSISTOR
|
 eleflow technologies co... |
2SC3133
|
283Kb/4P |
10 watts output power amplifiers in HF band SSB mobile radio application
|
 Sanyo Semicon Device |
2SC3134
|
106Kb/4P |
For AF Applications
|
 Guangdong Kexin Industr... |
2SC3134
|
37Kb/1P |
NPN Epitaxial Planar Silicon Transistor
|
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2SC3134-H4-HF
|
794Kb/3P |
NPN Transistors
|
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2SC3134-H5-HF
|
794Kb/3P |
NPN Transistors
|
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2SC3134-H6-HF
|
794Kb/3P |
NPN Transistors
|
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2SC3134-H7-HF
|
794Kb/3P |
NPN Transistors
|
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2SC3134-HF
|
794Kb/3P |
NPN Transistors
|
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2SC3134
|
644Kb/3P |
NPN Transistors
|
 Sanyo Semicon Device |
2SC3135
|
110Kb/4P |
High-hFE,AF Amp Applications
|
 Toshiba Semiconductor |
2SC3136
|
130Kb/4P |
SILICON NPN EPITAXIAL PLANAR TYPE
|
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2SC3137
|
73Kb/1P |
TRANSISTOR
|
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2SC3138
|
168Kb/4P |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)
|
 Guangdong Kexin Industr... |
2SC3138
|
37Kb/1P |
Silicon NPN Triple Diffused Type
|
 Toshiba Semiconductor |
2SC3138
|
114Kb/5P |
High Voltage Switching Applications
|
 Jiangsu Changjiang Elec... |
2SC3138
|
740Kb/4P |
SOT-23-3L Plastic-Encapsulate Transistors
|
 Toshiba Semiconductor |
2SC3138
|
114Kb/5P |
High Voltage Switching Applications
|
 Mitsubishi Electric Sem... |
2SC3101
|
92Kb/2P |
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
|