| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Isahaya Electronics Cor... |
2SC3580
|
120Kb/3P |
SMALL-SIGNAL TRANSISTOR
|
|
2SC3581
|
121Kb/3P |
SMALL-SIGNAL TRANSISTOR
|
NEC |
2SC3582
|
99Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Inchange Semiconductor ... |
2SC3582
|
310Kb/6P |
Low Noise and High Gain
|
Renesas Technology Corp |
2SC3583
|
321Kb/10P |
SILICON TRANSISTOR
|
NEC |
2SC3585
|
103Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
Guangdong Kexin Industr... |
2SC3585
|
38Kb/1P |
NPN Silicon Epitaxial Transistor
|
Renesas Technology Corp |
2SC3585
|
321Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
California Eastern Labs |
2SC3585
|
1Mb/5P |
MICROWAVE LOW NOISE AMPLIFIER
|
Inchange Semiconductor ... |
2SC3585
|
308Kb/6P |
Low Noise and High Gain
|
NEC |
2SC3585-T1B
|
103Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
Renesas Technology Corp |
2SC3585
|
321Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
NEC |
2SC3587
|
91Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
Renesas Technology Corp |
2SC3587
|
215Kb/10P |
SILICON TRANSISTOR
1996 |
NEC |
2SC3588
|
238Kb/4P |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3
|
Inchange Semiconductor ... |
2SC3588
|
285Kb/2P |
isc Silicon NPN Power Transistor
|
NEC |
2SC3588-Z
|
238Kb/4P |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3
|
Guangdong Kexin Industr... |
2SC3588-Z
|
40Kb/1P |
NPN Silicon Triple Diffused Transistor
|
Inchange Semiconductor ... |
2SC3588-Z
|
285Kb/2P |
isc Silicon NPN Power Transistor
|
Renesas Technology Corp |
2SC3588-Z
|
243Kb/4P |
SILICON TRANSISTOR
1985 |
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand