| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Panasonic Semiconductor |
2SC3611
|
70Kb/4P |
Silicon NPN epitaxial planar type(For video amplifier)
2001 MAR |
 Toshiba Semiconductor |
2SC3613
|
226Kb/3P |
NPN EPITAXIAL TYPE (VIDEO DRIVER STAGE IN HIGH RESOUTION DISPLAY, HIGH SPEED SWITCHING APPLICATIONS)
|
 NEC |
2SC3615
|
164Kb/3P |
NPN SILICON TRANSISTOR
|
|
2SC3616
|
168Kb/3P |
NPN SILICON TRANSISTOR
|
|
2SC3617
|
225Kb/4P |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
 Guangdong Kexin Industr... |
2SC3617
|
51Kb/1P |
NPN Silicon Epitaxia
|
 Renesas Technology Corp |
2SC3617
|
346Kb/6P |
Old Company Name in Catalogs and Other Documents
|
|
2SC3617
|
346Kb/6P |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
 Toshiba Semiconductor |
2SC3619
|
192Kb/3P |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER, COLOR TV HORIZONTAL DRIVER, COLOR TV CHROMA OUTPUT APPLICATIONS)
|
|
2SC3619
|
129Kb/5P |
Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications
|
 Savantic, Inc. |
2SC3619
|
146Kb/4P |
Silicon NPN Power Transistors
|
 Inchange Semiconductor ... |
2SC3619
|
173Kb/4P |
Silicon NPN Power Transistors
|
 Savantic, Inc. |
2SC3619
|
148Kb/4P |
Silicon NPN Power Transistors
|
 Toshiba Semiconductor |
2SC3619
|
129Kb/5P |
Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications
|
 Sanyo Semicon Device |
2SC3600
|
116Kb/4P |
high-Definition CRT Display Video Output Applications?
|
|
2SC3601
|
212Kb/8P |
Ultrahigh-Definition CRT Display Video Output Applications?
|
 NEC |
2SC3603
|
89Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
 eleflow technologies co... |
2SC3603
|
222Kb/4P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
 Renesas Technology Corp |
2SC3603
|
214Kb/10P |
SILICON TRANSISTOR
1995 |
 NEC |
2SC3604
|
94Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|