| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
2SC5171
|
145Kb/2P |
NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
|
2SC5171
|
123Kb/4P |
Silicon NPN Epitaxial Type Power Amplifier Applications
|
 Foshan Blue Rocket Elec... |
2SC5171
|
1Mb/6P |
Silicon NPN transistor in a TO-220F Plastic Package.
|
 Jiangsu Changjiang Elec... |
2SC5171
|
1Mb/2P |
TO-220F Plastic-Encapsulate Transistors
|
 Toshiba Semiconductor |
2SC5171
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 Inchange Semiconductor ... |
2SC5171
|
277Kb/2P |
Silicon NPN Power Transistor
|
 Foshan Blue Rocket Elec... |
2SC5171I
|
984Kb/6P |
Silicon NPN transistor in a TO-251 Plastic Package.
|
|
2SC5171S
|
1Mb/6P |
Silicon NPN transistor in a TO-126 Plastic Package.
|
 Toshiba Semiconductor |
2SC5171
|
123Kb/4P |
Silicon NPN Epitaxial Type Power Amplifier Applications
|
|
2SC5172
|
143Kb/5P |
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications
|
|
2SC5173
|
232Kb/4P |
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS
|
|
2SC5173
|
143Kb/4P |
High-Voltage Switching and Amplifier Applications
|
|
2SC5173
|
143Kb/4P |
High-Voltage Switching and Amplifier Applications
|
|
2SC5174
|
172Kb/3P |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
|
2SC5174
|
120Kb/3P |
Power Amplifier Applications
|
 Inchange Semiconductor ... |
2SC5174
|
278Kb/2P |
isc Silicon NPN Power Transistor
|
 Toshiba Semiconductor |
2SC5174
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SC5174
|
120Kb/3P |
Power Amplifier Applications
|
|
2SC5175
|
143Kb/2P |
NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS)
|
|
2SC5175
|
129Kb/4P |
High-Current Switching Applications
|