| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Panasonic Semiconductor |
2SC5190
|
37Kb/2P |
Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)
|
NEC |
2SC5191
|
57Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Inchange Semiconductor ... |
2SC5191
|
195Kb/14P |
Low Voltage Operation ,Low Phase Distortion
|
Renesas Technology Corp |
2SC5191
|
219Kb/9P |
NPN SILICON RF TRANSISTOR
2004 |
NEC |
2SC5191-T1
|
57Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Renesas Technology Corp |
2SC5191-T1B
|
219Kb/9P |
NPN SILICON RF TRANSISTOR
2004 |
NEC |
2SC5191-T2
|
57Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
|
2SC5192-T1
|
68Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
Renesas Technology Corp |
2SC5192-T1
|
222Kb/12P |
SILICON TRANSISTOR
1994 |
NEC |
2SC5192-T2
|
68Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
Renesas Technology Corp |
2SC5192-T2
|
222Kb/12P |
SILICON TRANSISTOR
1994 |
|
2SC5192R
|
715Kb/12P |
SILICON TRANSISTOR
1995 |
NEC |
2SC5193
|
65Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
|
Renesas Technology Corp |
2SC5193
|
220Kb/9P |
NPN SILICON RF TRANSISTOR
2004 |
NEC |
2SC5193-T1
|
65Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
|
Renesas Technology Corp |
2SC5193-T1
|
220Kb/9P |
NPN SILICON RF TRANSISTOR
2004 |
NEC |
2SC5193-T2
|
65Kb/12P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
|
|
2SC5194
|
65Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Renesas Technology Corp |
2SC5194
|
221Kb/12P |
SILICON TRANSISTOR
1994 |
NEC |
2SC5194-T1
|
65Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
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