| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Nanjing International G... |
2SC536-TA
|
1Mb/4P |
TO-92 Plastic-Encapsulate Transistors
|
Toshiba Semiconductor |
2SC5360
|
85Kb/1P |
NPN TRIPLE DIFFUSED TYPE (COLOR TV CHROM OUTPUT APPLICATIONS)
|
|
2SC5361
|
171Kb/4P |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)
|
|
2SC5361
|
147Kb/5P |
High-Voltage Switching Applications
|
|
2SC5361
|
147Kb/5P |
High-Voltage Switching Applications
|
Panasonic Semiconductor |
2SC5363
|
37Kb/2P |
Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)
|
Toshiba Semiconductor |
2SC5368
|
133Kb/4P |
Silicon NPN Triple Diffused Type
|
NEC |
2SC5369
|
72Kb/12P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
|
Renesas Technology Corp |
2SC5369
|
294Kb/14P |
SILICON TRANSISTOR
1996 |
Foshan Blue Rocket Elec... |
2SC536K
|
1Mb/6P |
Silicon NPN transistor in a TO-92 Plastic Package
|
|
2SC536KM
|
1Mb/6P |
Silicon NPN transistor in a SOT-23 Plastic Package
|
|
2SC536M
|
1Mb/6P |
Silicon NPN transistor in a SOT-23 Plastic Package
|
Sanyo Semicon Device |
2SC536N
|
40Kb/4P |
Low-Frequency General-Purpose Amplifier Applications
|
Jiangsu Changjiang Elec... |
2SC536N
|
1Mb/4P |
TO-92 Plastic-Encapsulate Transistors
|
ON Semiconductor |
2SC536NF-NPA-AT
|
267Kb/6P |
Bipolar Transistor
July, 2013 |
|
2SC536NG-NPA-AT
|
267Kb/6P |
Bipolar Transistor
July, 2013 |
|
2SC536NG-NPA-AT
|
267Kb/6P |
Bipolar Transistor
July, 2013 |
Jiangsu Changjiang Elec... |
2SC536S
|
598Kb/3P |
TO-92S Plastic-Encapsulate Transistors
|
Sanyo Semicon Device |
2SC5300
|
84Kb/3P |
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications??????????
|
|
2SC5301
|
84Kb/3P |
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications??????????
|
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