| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor |
2SC5720
|
95Kb/3P |
MEDIUM POWER AMPLIFIER APPLICATIONS
|
Sanyo Semicon Device |
2SC5722
|
50Kb/3P |
NPN PLANAR SILICON TRANSISTOR
|
Panasonic Semiconductor |
2SC5725
|
57Kb/2P |
Silicon NPN epitaxial planar type
|
Isahaya Electronics Cor... |
2SC5726
|
46Kb/2P |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
|
2SC5727
|
48Kb/2P |
SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Rohm |
2SC5729
|
79Kb/4P |
Medium power transistor (30V, 0.5A)
|
|
2SC5729
|
43Kb/4P |
MEDIUM POWER TRANSISTOR (-30V,-0.5A)
|
Toshiba Semiconductor |
2SC570
|
39Kb/1P |
2SC790
|
Hitachi Semiconductor |
2SC5700
|
102Kb/10P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Renesas Technology Corp |
2SC5700
|
192Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
|
2SC5700WB-TR-E
|
192Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor |
2SC5702
|
109Kb/16P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
Renesas Technology Corp |
2SC5702
|
277Kb/15P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
|
2SC5702ZS-TL-E
|
277Kb/15P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
Toshiba Semiconductor |
2SC5703
|
166Kb/5P |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
|
2SC5703
|
137Kb/5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
|
2SC5703
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SC5703
|
165Kb/5P |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2016-09-27 |
|
2SC5703
|
137Kb/5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
|
2SC5703
|
165Kb/5P |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2016-09-27 |
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